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PMDXB600UNEZ Технические параметры

Nexperia USA Inc.  PMDXB600UNEZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 19 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish Tin (Sn)
Max Power Dissipation 265mW
Pin Count 6
Свойство продукта Значение свойства
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5.6 ns
Power - Max 265mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 620m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 21.3pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Rise Time 9.2ns
Fall Time (Typ) 51 ns
Continuous Drain Current (ID) 600mA
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PMDXB600UNEZ Документы

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