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PMEG3010AESBYL Технические параметры
Nexperia USA Inc. PMEG3010AESBYL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Factory Lead Time | 8 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 2-XDFN | |
| Number of Pins | 2Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 150°C | |
| Packaging | Cut Tape (CT) | |
| Published | 2016 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | BOTTOM | |
| Terminal Form | NO LEAD | |
| Reference Standard | IEC-60134 | |
| Configuration | SINGLE | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 255μA @ 20V | |
| Voltage - Forward (Vf) (Max) @ If | 480mV @ 1A | |
| Forward Current | 1A | |
| Operating Temperature - Junction | 150°C Max | |
| Max Reverse Voltage (DC) | 30V | |
| Average Rectified Current | 1A | |
| Reverse Recovery Time | 3.5 ns | |
| Capacitance @ Vr, F | 86pF @ 1V 1MHz | |
| RoHS Status | ROHS3 Compliant |
PMEG3010AESBYL Документы
- DatasheetsPMEG3010AESB
- PCN Assembly/OriginDSN1006 Plating Chg 10/Jan/2019
- PCN PackagingLogo 10/Dec/2016 Label Chg 12/Mar/2017
- RohsStatementNXP-Semiconductors-company-12.pdf
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