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PMEG6030ETPX Технические параметры

Nexperia USA Inc.  PMEG6030ETPX technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-128
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Applications EFFICIENCY
Max Power Dissipation 2.5W
Terminal Position DUAL
Terminal Form FLAT
Base Part Number PMEG6030
Pin Count 2
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PDSO-F2
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Свойство продукта Значение свойства
Current - Reverse Leakage @ Vr 200μA @ 60V
Voltage - Forward (Vf) (Max) @ If 530mV @ 3A
Forward Current 3A
Max Reverse Leakage Current 200μA
Operating Temperature - Junction 175°C Max
Max Surge Current 50A
Output Current-Max 4.2A
Forward Voltage 460mV
Max Reverse Voltage (DC) 60V
Average Rectified Current 3A
Number of Phases 1Phase
Reverse Recovery Time 12 ns
Peak Reverse Current 200μA
Max Repetitive Reverse Voltage (Vrrm) 60V
Capacitance @ Vr, F 360pF @ 1V 1MHz
Peak Non-Repetitive Surge Current 50A
Reverse Voltage 60V
Max Forward Surge Current (Ifsm) 50A
Recovery Time 12 ns
Max Junction Temperature (Tj) 175°C
Ambient Temperature Range High 175°C
Natural Thermal Resistance 12 °C/W
Height 1.1mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PMEG6030ETPX Документы

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