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PMGD280UN,115 Технические параметры

Nexperia USA Inc.  PMGD280UN,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchMOS™
Published 1997
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Свойство продукта Значение свойства
Terminal Form GULL WING
Pin Count 6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 400mW
Power - Max 400mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 340m Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 0.89nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 870mA
Drain Current-Max (Abs) (ID) 0.87A
Drain-source On Resistance-Max 0.34Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant

PMGD280UN,115 Документы

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