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Nexperia USA Inc. PMK50XP,518 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | ||
Factory Lead Time | 16 Weeks | |
Contact Plating | Gold | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
Number of Pins | 8Pins | |
Supplier Device Package | 8-SO | |
Current - Continuous Drain (Id) @ 25℃ | 7.9A Tc | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V | |
Power Dissipation (Max) | 5W Tc | |
Turn Off Delay Time | 82 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Series | TrenchMOS™ | |
Published | 2010 | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 2 (1 Year) | |
Max Operating Temperature | 150°C | |
Min Operating Temperature | -55°C |
Свойство продукта | Значение свойства | |
---|---|---|
Element Configuration | Single | |
Power Dissipation | 5W | |
Turn On Delay Time | 8.5 ns | |
FET Type | P-Channel | |
Rds On (Max) @ Id, Vgs | 50mOhm @ 2.8A, 4.5V | |
Vgs(th) (Max) @ Id | 950mV @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 20V | |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V | |
Rise Time | 7.5ns | |
Drain to Source Voltage (Vdss) | 20V | |
Vgs (Max) | ±12V | |
Fall Time (Typ) | 35 ns | |
Continuous Drain Current (ID) | 7.9A | |
Gate to Source Voltage (Vgs) | 12V | |
Max Dual Supply Voltage | -20V | |
Drain to Source Breakdown Voltage | -20V | |
Input Capacitance | 1.02nF | |
Drain to Source Resistance | 50mOhm | |
Rds On Max | 10 mΩ | |
Radiation Hardening | No | |
RoHS Status | RoHS Compliant |