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PMV30UN2R Технические параметры

Nexperia USA Inc.  PMV30UN2R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 4.2A Ta
Drive Voltage (Max Rds On, Min Rds On) 1.2V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 490mW Ta 5W Tc
Turn Off Delay Time 35 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 655pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 26ns
Vgs (Max) ±12V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 4.2A
Threshold Voltage 650mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C
Ambient Temperature Range High 150°C
Height 1.1mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PMV30UN2R Документы

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