
Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Nexperia USA Inc. PMV30UN2R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | ||
Factory Lead Time | 4 Weeks | |
Contact Plating | Tin | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Number of Pins | 3Pins | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 4.2A Ta | |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V 4.5V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 490mW Ta 5W Tc | |
Turn Off Delay Time | 35 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Cut Tape (CT) | |
Published | 1997 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
Terminal Position | DUAL | |
Terminal Form | GULL WING | |
Pin Count | 3 |
Свойство продукта | Значение свойства | |
---|---|---|
Configuration | SINGLE WITH BUILT-IN DIODE | |
Number of Channels | 1Channel | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 1W | |
Turn On Delay Time | 7 ns | |
FET Type | N-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 32m Ω @ 4.2A, 4.5V | |
Vgs(th) (Max) @ Id | 900mV @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 655pF @ 10V | |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V | |
Rise Time | 26ns | |
Vgs (Max) | ±12V | |
Fall Time (Typ) | 10 ns | |
Continuous Drain Current (ID) | 4.2A | |
Threshold Voltage | 650mV | |
Gate to Source Voltage (Vgs) | 12V | |
Drain to Source Breakdown Voltage | 20V | |
Max Junction Temperature (Tj) | 150°C | |
Ambient Temperature Range High | 150°C | |
Height | 1.1mm | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |