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Nexperia USA Inc. PMV30UN2R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 4.2A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V 4.5V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 490mW Ta 5W Tc | |
| Turn Off Delay Time | 35 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 1997 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Pin Count | 3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Channels | 1Channel | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1W | |
| Turn On Delay Time | 7 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 32m Ω @ 4.2A, 4.5V | |
| Vgs(th) (Max) @ Id | 900mV @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 655pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V | |
| Rise Time | 26ns | |
| Vgs (Max) | ±12V | |
| Fall Time (Typ) | 10 ns | |
| Continuous Drain Current (ID) | 4.2A | |
| Threshold Voltage | 650mV | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain to Source Breakdown Voltage | 20V | |
| Max Junction Temperature (Tj) | 150°C | |
| Ambient Temperature Range High | 150°C | |
| Height | 1.1mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |