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PSMN016-100BS,118 Технические параметры

Nexperia USA Inc.  PSMN016-100BS,118 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 57A Tj
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 148W Tc
Turn Off Delay Time 36 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 148W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2404pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Rise Time 23ns
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Continuous Drain Current (ID) 57A
Gate to Source Voltage (Vgs) 4.5V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.016Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 101 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant

PSMN016-100BS,118 Документы

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