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Nexperia USA Inc. PSMN017-60YS,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | ||
Factory Lead Time | 12 Weeks | |
Mounting Type | Surface Mount | |
Package / Case | SC-100, SOT-669 | |
Surface Mount | YES | |
Number of Pins | 4Pins | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 44A Tc | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 74W Tc | |
Turn Off Delay Time | 27 ns | |
Operating Temperature | -55°C~175°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2010 | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 4Terminations | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Pin Count | 4 |
Свойство продукта | Значение свойства | |
---|---|---|
Element Configuration | Single | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 74W | |
Case Connection | DRAIN | |
Turn On Delay Time | 13 ns | |
FET Type | N-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 15.7m Ω @ 15A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 1mA | |
Input Capacitance (Ciss) (Max) @ Vds | 1172pF @ 30V | |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V | |
Rise Time | 6.4ns | |
Vgs (Max) | ±20V | |
Fall Time (Typ) | 12.7 ns | |
Continuous Drain Current (ID) | 44A | |
Threshold Voltage | 3V | |
JEDEC-95 Code | MO-235 | |
Gate to Source Voltage (Vgs) | 20V | |
Max Dual Supply Voltage | 60V | |
Drain to Source Breakdown Voltage | 54V | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant |