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PSMN1R2-30YLC,115 Технические параметры

Nexperia USA Inc.  PSMN1R2-30YLC,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 215W Tc
Turn Off Delay Time 75 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY, ULTRA LOW RESISTANCE
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Pin Count 4
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 215W
Case Connection DRAIN
Turn On Delay Time 36 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.25m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5093pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Rise Time 60ns
Vgs (Max) ±20V
Fall Time (Typ) 39 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 209 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PSMN1R2-30YLC,115 Документы

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