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PSMN1R3-30YL,115 Технические параметры

Nexperia USA Inc.  PSMN1R3-30YL,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SOT-1023, 4-LFPAK
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 121W Tc
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Pin Count 4
JESD-30 Code R-PSSO-G4
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6227pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.00195Ohm
Pulsed Drain Current-Max (IDM) 923A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 383 mJ
RoHS Status ROHS3 Compliant
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PSMN1R3-30YL,115 Документы

PSMN1R3-30YL,115 brand manufacturers: Nexperia USA Inc., Anli stock, PSMN1R3-30YL,115 reference price.Nexperia USA Inc.. PSMN1R3-30YL,115 parameters, PSMN1R3-30YL,115 Datasheet PDF and pin diagram description download.You can use the PSMN1R3-30YL,115 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find PSMN1R3-30YL,115 pin diagram and circuit diagram and usage method of function,PSMN1R3-30YL,115 electronics tutorials.You can download from the Anli.