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PSMN1R7-60BS,118 Технические параметры

Nexperia USA Inc.  PSMN1R7-60BS,118 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 120A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 306W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 9997pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 137nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 120A
Drain-source On Resistance-Max 0.002Ohm
Pulsed Drain Current-Max (IDM) 1076A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 913 mJ
RoHS Status ROHS3 Compliant

PSMN1R7-60BS,118 Документы

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