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PSMN1R8-30PL,127 Технические параметры

Nexperia USA Inc.  PSMN1R8-30PL,127 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 270W Tc
Turn Off Delay Time 135 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Resistance 1.8MOhm
Terminal Finish Tin (Sn)
Pin Count 3
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 270W
Case Connection DRAIN
Turn On Delay Time 92 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 10180pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 160ns
Vgs (Max) ±20V
Fall Time (Typ) 70 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PSMN1R8-30PL,127 Документы

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