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PSMN2R0-30PL,127 Технические параметры

Nexperia USA Inc.  PSMN2R0-30PL,127 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3Pins
Weight 453.59237mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 211W Tc
Turn Off Delay Time 111 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Power Dissipation 211W
Case Connection DRAIN
Turn On Delay Time 63 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.1m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6810pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
Rise Time 125ns
Vgs (Max) ±20V
Fall Time (Typ) 59 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0028Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 555 mJ
Height 6.35mm
Length 31.75mm
Width 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PSMN2R0-30PL,127 Документы

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