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PSMN2R0-30YLDX Технические параметры

Nexperia USA Inc.  PSMN2R0-30YLDX technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 142W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Additional Feature HIGH RELIABILITY
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 4
Reference Standard IEC-60134
JESD-30 Code R-PSSO-G4
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2969pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235
Drain-source On Resistance-Max 0.0025Ohm
Pulsed Drain Current-Max (IDM) 793A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 397 mJ
RoHS Status ROHS3 Compliant

PSMN2R0-30YLDX Документы

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