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PSMN2R8-25MLC,115 Технические параметры

Nexperia USA Inc.  PSMN2R8-25MLC,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case SOT-1210, 8-LFPAK33
Surface Mount YES
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 70A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 88W Tc
Turn Off Delay Time 19.9 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 8
Reference Standard IEC-60134
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G4
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 88W
Case Connection DRAIN
Turn On Delay Time 16.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2432pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs 37.7nC @ 10V
Rise Time 24.6ns
Vgs (Max) ±20V
Fall Time (Typ) 13.1 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 1.95V
Max Dual Supply Voltage 25V
Drain-source On Resistance-Max 0.00375Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 536A
Avalanche Energy Rating (Eas) 77 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant

PSMN2R8-25MLC,115 Документы

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