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PSMN3R0-30YLDX Технические параметры

Nexperia USA Inc.  PSMN3R0-30YLDX technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 91W Tc
Turn Off Delay Time 16.9 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 91W
Case Connection DRAIN
Turn On Delay Time 13.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.1m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2939pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 46.4nC @ 10V
Rise Time 21ns
Vgs (Max) ±20V
Fall Time (Typ) 12.4 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 227.5 mJ
RoHS Status ROHS3 Compliant
Просмотр сходства
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