
Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Nexperia USA Inc. PSMN3R9-25MLC,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | ||
Factory Lead Time | 26 Weeks | |
Mounting Type | Surface Mount | |
Package / Case | SOT-1210, 8-LFPAK33 | |
Number of Pins | 8Pins | |
Supplier Device Package | LFPAK33 | |
Current - Continuous Drain (Id) @ 25℃ | 70A Tc | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
Power Dissipation (Max) | 69W Tc | |
Turn Off Delay Time | 15.6 ns | |
Operating Temperature | -55°C~175°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2012 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Max Operating Temperature | 175°C | |
Min Operating Temperature | -55°C | |
Power Dissipation | 69W |
Свойство продукта | Значение свойства | |
---|---|---|
Turn On Delay Time | 13 ns | |
FET Type | N-Channel | |
Rds On (Max) @ Id, Vgs | 4.15mOhm @ 25A, 10V | |
Vgs(th) (Max) @ Id | 2.15V @ 1mA | |
Input Capacitance (Ciss) (Max) @ Vds | 1524pF @ 12.5V | |
Gate Charge (Qg) (Max) @ Vgs | 21.5nC @ 10V | |
Rise Time | 23.2ns | |
Drain to Source Voltage (Vdss) | 25V | |
Vgs (Max) | ±20V | |
Fall Time (Typ) | 9.8 ns | |
Continuous Drain Current (ID) | 70A | |
Gate to Source Voltage (Vgs) | 1.95V | |
Max Dual Supply Voltage | 25V | |
Drain to Source Breakdown Voltage | 25V | |
Input Capacitance | 1.524nF | |
Drain to Source Resistance | 6.35mOhm | |
Rds On Max | 4.15 mΩ | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant |