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PSMN3R9-60PSQ Технические параметры

Nexperia USA Inc.  PSMN3R9-60PSQ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3Pins
Weight 6.000006g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 130A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 263W Tc
Turn Off Delay Time 62.7 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Pin Count 3
Свойство продукта Значение свойства
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 25.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.9m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 103nC @ 10V
Rise Time 41.4ns
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Continuous Drain Current (ID) 130A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 705A
RoHS Status ROHS3 Compliant
Просмотр сходства
PSMN3R9-60PSQ brand manufacturers: Nexperia USA Inc., Anli stock, PSMN3R9-60PSQ reference price.Nexperia USA Inc.. PSMN3R9-60PSQ parameters, PSMN3R9-60PSQ Datasheet PDF and pin diagram description download.You can use the PSMN3R9-60PSQ Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find PSMN3R9-60PSQ pin diagram and circuit diagram and usage method of function,PSMN3R9-60PSQ electronics tutorials.You can download from the Anli.