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PSMN4R1-30YLC,115 Технические параметры

Nexperia USA Inc.  PSMN4R1-30YLC,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4Pins
Current - Continuous Drain (Id) @ 25℃ 92A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 67W Tc
Turn Off Delay Time 24 ns
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Terminal Finish Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Additional Feature HIGH RELIABILITY
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 64W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.35m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1502pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 19ns
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 92A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain Current-Max (Abs) (ID) 90A
Drain-source On Resistance-Max 0.0057Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 360A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PSMN4R1-30YLC,115 Документы

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