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Nexperia USA Inc. PSMN4R3-100PS,127 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 120A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 338W Tc | |
| Turn Off Delay Time | 122 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Published | 2011 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Pin Count | 3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 338W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 45 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 4.3m Ω @ 25A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 9900pF @ 50V | |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V | |
| Rise Time | 91ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 63 ns | |
| Continuous Drain Current (ID) | 120A | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20V | |
| Max Dual Supply Voltage | 100V | |
| Drain to Source Breakdown Voltage | 100V | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |