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PSMN4R6-60PS,127 Технические параметры

Nexperia USA Inc.  PSMN4R6-60PS,127 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 211W Tc
Turn Off Delay Time 58 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Pin Count 3
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 211W
Case Connection DRAIN
Turn On Delay Time 26 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4426pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 70.8nC @ 10V
Rise Time 24ns
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0046Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 565A
Radiation Hardening No
RoHS Status ROHS3 Compliant

PSMN4R6-60PS,127 Документы

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