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PSMN4R8-100PSEQ Технические параметры

Nexperia USA Inc.  PSMN4R8-100PSEQ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 120A Tj
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 405W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Position SINGLE
Pin Count 3
Reference Standard IEC-60134
Свойство продукта Значение свойства
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 278nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Continuous Drain Current (ID) 120A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.005Ohm
Pulsed Drain Current-Max (IDM) 693A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 542 mJ
RoHS Status ROHS3 Compliant
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PSMN4R8-100PSEQ Документы

PSMN4R8-100PSEQ brand manufacturers: Nexperia USA Inc., Anli stock, PSMN4R8-100PSEQ reference price.Nexperia USA Inc.. PSMN4R8-100PSEQ parameters, PSMN4R8-100PSEQ Datasheet PDF and pin diagram description download.You can use the PSMN4R8-100PSEQ Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find PSMN4R8-100PSEQ pin diagram and circuit diagram and usage method of function,PSMN4R8-100PSEQ electronics tutorials.You can download from the Anli.