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PSMN6R0-30YL,115 Технические параметры

Nexperia USA Inc.  PSMN6R0-30YL,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 79A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 55W Tc
Turn Off Delay Time 31 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 55W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1425pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 43ns
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 79A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain Current-Max (Abs) (ID) 73A
Drain-source On Resistance-Max 0.0097Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 292A
Avalanche Energy Rating (Eas) 26 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PSMN6R0-30YL,115 Документы

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