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PSMN6R3-120PS Технические параметры

Nexperia USA Inc.  PSMN6R3-120PS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Number of Pins 3Pins
Transistor Element Material SILICON
Turn Off Delay Time 142.1 ns
Power Dissipation (Max) 405W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 70A Tc
Published 2013
Packaging Tube
Operating Temperature -55°C~175°C TJ
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 405W
Case Connection DRAIN
Turn On Delay Time 42.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 11384pF @ 60V
Gate Charge (Qg) (Max) @ Vgs 207.1nC @ 10V
Rise Time 58.2ns
Vgs (Max) ±20V
Fall Time (Typ) 67.7 ns
Continuous Drain Current (ID) 70A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 120V
Drain-source On Resistance-Max 0.0067Ohm
Drain to Source Breakdown Voltage 120V
Pulsed Drain Current-Max (IDM) 280A
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC

PSMN6R3-120PS Документы

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