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PUMB30,115 Технические параметры

Nexperia USA Inc.  PUMB30,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 2 Elements
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT IN BIAS RESISTOR
Свойство продукта Значение свойства
HTS Code 8541.21.00.95
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MB30
Pin Count 6
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 300mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type 2 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2k Ω
RoHS Status ROHS3 Compliant
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PUMB30,115 Документы

PUMB30,115 brand manufacturers: Nexperia USA Inc., Anli stock, PUMB30,115 reference price.Nexperia USA Inc.. PUMB30,115 parameters, PUMB30,115 Datasheet PDF and pin diagram description download.You can use the PUMB30,115 Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find PUMB30,115 pin diagram and circuit diagram and usage method of function,PUMB30,115 electronics tutorials.You can download from the Anli.