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Nexperia USA Inc. PUMD2,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
Марка | ||
Factory Lead Time | 4 Weeks | |
Mounting Type | Surface Mount | |
Package / Case | 6-TSSOP, SC-88, SOT-363 | |
Surface Mount | YES | |
Number of Pins | 6Pins | |
Transistor Element Material | SILICON | |
Current-Collector (Ic) (Max) | 100mA | |
Number of Elements | 2 Elements | |
Packaging | Tape & Reel (TR) | |
Published | 2001 | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 6Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin (Sn) |
Свойство продукта | Значение свойства | |
---|---|---|
Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Base Part Number | MD2 | |
Pin Count | 6 | |
Polarity | NPN, PNP | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
Power - Max | 300mW | |
Transistor Application | SWITCHING | |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA 5V | |
Current - Collector Cutoff (Max) | 1μA | |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500μA, 10mA | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Resistor - Base (R1) | 22k Ω | |
Resistor - Emitter Base (R2) | 22k Ω | |
RoHS Status | ROHS3 Compliant |