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PUMD3,135 Технические параметры
Nexperia USA Inc. PUMD3,135 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Number of Pins | 6Pins | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 2 Elements | |
| Packaging | Tape & Reel (TR) | |
| Published | 2013 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -65°C | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 300mW | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Base Part Number | P*MD3 | |
| Pin Count | 6 | |
| Polarity | NPN, PNP | |
| Element Configuration | Dual | |
| Transistor Application | SWITCHING | |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
| Collector Emitter Voltage (VCEO) | 50V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA 5V | |
| Current - Collector Cutoff (Max) | 1μA | |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500μA, 10mA | |
| Resistor - Base (R1) | 10k Ω | |
| Resistor - Emitter Base (R2) | 10k Ω | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
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