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PUMH11F Технические параметры

Nexperia USA Inc.  PUMH11F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MH11
Pin Count 6
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G6
Element Configuration Dual
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 150mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA
Transition Frequency 230MHz
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 10k Ω
RoHS Status ROHS3 Compliant
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PUMH11F Документы

PUMH11F brand manufacturers: Nexperia USA Inc., Anli stock, PUMH11F reference price.Nexperia USA Inc.. PUMH11F parameters, PUMH11F Datasheet PDF and pin diagram description download.You can use the PUMH11F Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find PUMH11F pin diagram and circuit diagram and usage method of function,PUMH11F electronics tutorials.You can download from the Anli.