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PUMH13,115 Технические параметры

Nexperia USA Inc.  PUMH13,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 2 Elements
Operating Temperature (Max.) 150°C
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 10
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Qualification Status Not Qualified
Polarity NPN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 300mW
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status ROHS3 Compliant
Просмотр сходства
PUMH13,115 brand manufacturers: Nexperia USA Inc., Anli stock, PUMH13,115 reference price.Nexperia USA Inc.. PUMH13,115 parameters, PUMH13,115 Datasheet PDF and pin diagram description download.You can use the PUMH13,115 Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find PUMH13,115 pin diagram and circuit diagram and usage method of function,PUMH13,115 electronics tutorials.You can download from the Anli.