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Nexperia USA Inc. RB521S30,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-79, SOD-523 | |
| Number of Pins | 2Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Applications | EFFICIENCY | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Base Part Number | RB521S30 | |
| Pin Count | 2 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reference Standard | AEC-Q101; IEC-60134 | |
| Element Configuration | Single | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 30μA @ 10V | |
| Power Dissipation | 275mW | |
| Voltage - Forward (Vf) (Max) @ If | 500mV @ 200mA | |
| Forward Current | 200mA | |
| Operating Temperature - Junction | 150°C Max | |
| Max Surge Current | 1A | |
| Forward Voltage | 500mV | |
| Max Reverse Voltage (DC) | 30V | |
| Average Rectified Current | 200mA | |
| Number of Phases | 1Phase | |
| Peak Reverse Current | 2.5μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 30V | |
| Capacitance @ Vr, F | 25pF @ 1V 1MHz | |
| Peak Non-Repetitive Surge Current | 1A | |
| Reverse Voltage | 30V | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |