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JT-083 Технические параметры
NTE ELECT JT-083 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Miscellaneous | |
| Марка | NTE ELECT | |
| Package / Case | SOIC-8 | |
| Vds - Drain-Source Breakdown Voltage | 100 V | |
| Typical Turn-On Delay Time | 10 ns | |
| Vgs th - Gate-Source Threshold Voltage | 4 V | |
| Pd - Power Dissipation | 5 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Unit Weight | 0.004586 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 2500 | |
| Mounting Styles | SMD/SMT | |
| Forward Transconductance - Min | 6 S | |
| Channel Mode | Enhancement | |
| Manufacturer | onsemi | |
| Brand | onsemi / Fairchild | |
| Qg - Gate Charge | 3 nC |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Tradename | PowerTrench | |
| Rds On - Drain-Source Resistance | 83 mOhms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 15 ns | |
| Id - Continuous Drain Current | 3.4 A | |
| Series | FDS86106 | |
| Packaging | MouseReel | |
| Type | N-Channel Power Trench MOSFET | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Rise Time | 10 ns | |
| Product Type | MOSFET | |
| Transistor Type | 1 N-Channel | |
| Product Category | MOSFET | |
| Width | 3.9 mm | |
| Height | 1.75 mm | |
| Length | 4.9 mm |
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