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NTE15 Технические параметры
NTE ELECT NTE15 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | NTE ELECT | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 3-SIP | |
| Number of Pins | 3Pins | |
| Supplier Device Package | 3-SIP | |
| Manufacturer Part Number | NTE15 | |
| Manufacturer | NTE Electronics | |
| RoHS | Compliant | |
| Package | Bag | |
| Current-Collector (Ic) (Max) | 50mA | |
| Mfr | NTE Electronics, Inc | |
| Product Status | Active | |
| Operating Temperature | 125°C (TJ) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | - | |
| Max Operating Temperature | 125 °C | |
| Min Operating Temperature | -55 °C | |
| Power - Max | 300mW | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 19 V | |
| Max Collector Current | 50 mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 39 @ 5mA, 10V | |
| Gain | - | |
| Voltage - Collector Emitter Breakdown (Max) | 19V | |
| Max Frequency | 1.1 GHz | |
| Frequency - Transition | 1.1GHz | |
| Collector Base Voltage (VCBO) | 30 V | |
| Emitter Base Voltage (VEBO) | 4 V | |
| Noise Figure (dB Typ @ f) | - |
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