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NTE326 Технические параметры

NTE Electronics  NTE326 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - JFETs
Марка
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Supplier Device Package TO-92
Material Si
Number of Terminals 3Terminals
Transistor Element Material SILICON
ECCN (US) EAR99
Maximum Gate Source Voltage (V) 40
Maximum Drain Gate Voltage (V) 40
Maximum Power Dissipation (mW) 310
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 135
Automotive No
Standard Package Name TO-92
Supplier Package TO-92
Military No
Mounting Through Hole
Package Height 5.33(Max)
Package Length 5.2(Max)
Package Width 4.2(Max)
PCB changed 3
Lead Shape Through Hole
Manufacturer Part Number NTE326
Manufacturer NTE Electronics
Operating Temperature (Max.) 135C
Operating Temperature Classification Military
Package Type TO-92
Gate-Source Voltage (Max) 40(V)
Rad Hardened No
Operating Temperature (Min.) -65C
Package Bag
Mfr NTE Electronics, Inc
Product Status Active
Package Description CYLINDRICAL, O-PBCY-W3
Package Style CYLINDRICAL
Свойство продукта Значение свойства
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Package Shape ROUND
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Risk Rank 1.57
Part Package Code TO-92
Operating Temperature -65°C ~ 135°C (TJ)
Series -
Part Status Active
HTS Code 8541.21.00.95
Subcategory FET General Purpose Small Signal
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code O-PBCY-W3
Qualification Status Not Qualified
Configuration Single
Operating Mode DEPLETION MODE
Power - Max 310 mW
FET Type P-Channel
Transistor Application AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds 7pF @ 15V
Polarity/Channel Type P-CHANNEL
JEDEC-95 Code TO-92
Channel Type P
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.31 W
Feedback Cap-Max (Crss) 2 pF
Current - Drain (Idss) @ Vds (Vgs=0) 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id 1 V @ 1 µA
Voltage - Breakdown (V(BR)GSS) 40 V
RoHS Status RoHS Compliant

NTE326 Документы

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