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NTE5319 Технические параметры
NTE Electronics NTE5319 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | 4-ESIP | |
| Surface Mount | NO | |
| Supplier Device Package | 4-SIP | |
| Diode Element Material | SILICON | |
| Number of Terminals | 4Terminals | |
| ECCN (US) | EAR99 | |
| HTS | 8541.10.00.80 | |
| Bridge Type | Single Phase | |
| Peak Reverse Repetitive Voltage (V) | 600 | |
| Peak Average Forward Current (A) | 4@Ta=50C | |
| Peak RMS Reverse Voltage (V) | 420 | |
| Peak Non-Repetitive Forward Surge Current (A) | 200 | |
| Peak Forward Voltage (V) | 1@3A | |
| Peak Reverse Current (uA) | 10 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 125 | |
| Military | No | |
| Mounting | Through Hole | |
| Package Height | 14.38(Max) | |
| Package Length | 19.48(Max) | |
| Package Width | 6.37(Max) | |
| PCB changed | 4 | |
| Manufacturer Part Number | NTE5319 | |
| Manufacturer | NTE Electronics | |
| Peak Rep Rev Volt | 600(V) | |
| Operating Temperature Classification | Military | |
| Avg. Forward Curr (Max) | 4(A) | |
| Phase Type | Single Phase | |
| Rev Curr | 10(mA) | |
| Operating Temp Range | -55C to 125C | |
| Number of Elements | 1 Element | |
| RMS Voltage (Max) | 420(V) | |
| Peak Non-Repetitive Surge Current (Max) | 200(A) | |
| Rad Hardened | No | |
| Package | Bag |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Mfr | NTE Electronics, Inc | |
| Product Status | Active | |
| Package Description | R-PSIP-W4 | |
| Package Style | IN-LINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Package Shape | RECTANGULAR | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Forward Voltage-Max (VF) | 1 V | |
| Risk Rank | 2.11 | |
| Operating Temperature | -55°C ~ 125°C (TJ) | |
| Series | - | |
| Part Status | Active | |
| HTS Code | 8541.10.00.80 | |
| Subcategory | Bridge Rectifier Diodes | |
| Technology | Standard | |
| Terminal Position | SINGLE | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSIP-W4 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Diode Type | Single Phase | |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V | |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 3 A | |
| Output Current-Max | 4 A | |
| Current - Average Rectified (Io) | 4 A | |
| Forward Voltage | 1(V) | |
| Number of Phases | 1Phase | |
| Rep Pk Reverse Voltage-Max | 600 V | |
| Non-rep Pk Forward Current-Max | 200 A | |
| Voltage - Peak Reverse (Max) | 600 V | |
| RoHS Status | RoHS Compliant |
NTE5319 Документы
- datasheetsnteelectronics-nte5319-datasheets-4623.pdf
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