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NTE582-10 Технические параметры

NTE Electronics  NTE582-10 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 1000
Peak Reverse Repetitive Voltage (V) 1000
Maximum Continuous Forward Current (A) 2@Ta=55C
Peak Non-Repetitive Surge Current (A) 60
Peak Forward Voltage (V) 1.2
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 500
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 125
Automotive No
Supplier Package DO-15
Military No
Mounting Through Hole
Package Length 7.62(Max)
PCB changed 2
Peak Rep Rev Volt 1000(V)
Peak Forward Voltage 1.2(V)
Operating Temperature Classification Military
Package Type DO-15
Peak Reverse Recovery Time 500(ns)
Свойство продукта Значение свойства
Rev Curr 5(uA)
Operating Temp Range -65C to 125C
Rev Recov Time 500(ns)
Rad Hardened No
Rectifier Type Switching Diode
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Manufacturer Part Number NTE582-10
Manufacturer NTE Electronics Inc
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Risk Rank 2.3
Part Status Active
Type Switching Diode
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count 2
Configuration Single
Diode Type RECTIFIER DIODE
Forward Voltage 1.2(V)
Peak Reverse Current 5(uA)
Peak Non-Repetitive Surge Current 60(A)
Diameter 3.6(Max)
RoHS Status RoHS Compliant

NTE582-10 Документы

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