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NTE133 Технические параметры
NTE Electronics, Inc. NTE133 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-106-3 Domed | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-106 | |
| Weight | 4.535924 g | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Manufacturer Part Number | NTE133 | |
| Manufacturer | NTE Electronics | |
| Breakdown Voltage / V | -25 V | |
| RoHS | Compliant | |
| Package | Bag | |
| Mfr | NTE Electronics, Inc | |
| Product Status | Active | |
| Package Description | TO-106, 3 PIN | |
| Package Style | CYLINDRICAL | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 1.57 | |
| Part Package Code | BCY | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | - | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| HTS Code | 8541.21.00.95 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Subcategory | Other Transistors | |
| Max Power Dissipation | 300 mW | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | O-PBCY-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Element Configuration | Single | |
| Operating Mode | DEPLETION MODE | |
| Power Dissipation | 300 mW | |
| Power - Max | 300 mW | |
| FET Type | N-Channel | |
| Transistor Application | AMPLIFIER | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Drain to Source Voltage (Vdss) | 25 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 500 µA | |
| JEDEC-95 Code | TO-106 | |
| Gate to Source Voltage (Vgs) | -25 V | |
| Drain to Source Breakdown Voltage | -6.5 V | |
| DS Breakdown Voltage-Min | 25 V | |
| FET Technology | JUNCTION | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Feedback Cap-Max (Crss) | 2 pF | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 500 µA @ 15 V | |
| Voltage - Cutoff (VGS off) @ Id | 6.5 V @ 1 nA | |
| Voltage - Breakdown (V(BR)GSS) | 25 V | |
| Width | 5.2832 mm | |
| Height | 4.572 mm | |
| Length | 88.9 mm | |
| REACH SVHC | Unknown |
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