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NTE16001 Технические параметры
NTE Electronics, Inc NTE16001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Package / Case | 3-SIP | |
| Mounting Type | Through Hole | |
| Mount | Through Hole | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Supplier Device Package | 3-SIP | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 50 mA | |
| Product Status | Active | |
| Package | Bag | |
| Mfr | NTE Electronics, Inc | |
| Manufacturer Part Number | NTE16001 | |
| Manufacturer | NTE Electronics | |
| RoHS | Compliant | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Package Style | IN-LINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Transition Frequency-Nom (fT) | 500 MHz | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 2.13 | |
| Operating Temperature | 150°C (TJ) | |
| Series | - | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| HTS Code | 8541.21.00.75 | |
| Subcategory | Other Transistors | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Power - Max | 600 mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 35 V | |
| Max Collector Current | 50 mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10mA, 10V | |
| Current - Collector Cutoff (Max) | 10μA | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA | |
| Voltage - Collector Emitter Breakdown (Max) | 35 V | |
| Frequency - Transition | 500MHz | |
| Collector Base Voltage (VCBO) | 45 V | |
| Power Dissipation-Max (Abs) | 0.6 W | |
| Emitter Base Voltage (VEBO) | 4 V | |
| Collector Current-Max (IC) | 0.05 A | |
| Collector-Emitter Voltage-Max | 35 V | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| Collector-Base Capacitance-Max | 1.5 pF |
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