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- Transistors - Bipolar (BJT) - Single, Pre-Biased
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- NTE2369
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NTE2369 Технические параметры
NTE Electronics, Inc NTE2369 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 Short Body | |
| Surface Mount | NO | |
| Supplier Device Package | TO-92S | |
| Weight | 4.535924 g | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 100 mA | |
| Manufacturer Part Number | NTE2369 | |
| Manufacturer | NTE Electronics | |
| RoHS | Compliant | |
| Package Description | CYLINDRICAL, O-PBCY-T3 | |
| Package Style | CYLINDRICAL | |
| Package Body Material | PLASTIC/EPOXY | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| Package Shape | ROUND | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 2.17 | |
| Part Package Code | TO-92 | |
| Series | - | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | DIGITAL, BUILT IN BIAS RESISTOR | |
| HTS Code | 8541.21.00.75 | |
| Subcategory | Other Transistors | |
| Terminal Position | BOTTOM | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| Power - Max | 300 mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN - Pre-Biased | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | |
| Frequency - Transition | 250 MHz | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 80 | |
| Resistor - Base (R1) | 4.7 kOhms | |
| Resistor - Emitter Base (R2) | 4.7 kOhms | |
| Collector-Emitter Voltage-Max | 50 V | |
| Width | 101.6 mm | |
| Height | 6.35 mm | |
| Length | 152.4 mm |
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