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- Transistors - Bipolar (BJT) - Single, Pre-Biased
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- NTE2370
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NTE2370 Технические параметры
NTE Electronics, Inc NTE2370 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 Short Body | |
| Supplier Device Package | TO-92S | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 100 mA | |
| Manufacturer Part Number | NTE2370 | |
| Manufacturer | NTE Electronics |
| Свойство продукта | Значение свойства | |
|---|---|---|
| RoHS | Compliant | |
| Series | - | |
| Power - Max | 200 mW | |
| Transistor Type | PNP - Pre-Biased | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | |
| Frequency - Transition | 200 MHz | |
| Resistor - Base (R1) | 4.7 kOhms | |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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