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NTE2392 Технические параметры
NTE Electronics, Inc. NTE2392 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Through Hole | |
| Package / Case | TO-204AA, TO-3 | |
| Mounting Type | Through Hole | |
| Surface Mount | NO | |
| Number of Pins | 2Pins | |
| Supplier Device Package | TO-3 | |
| Weight | 72.574779 g | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Non-Compliant | |
| Turn Off Delay Time | 125 ns | |
| Manufacturer Part Number | NTE2392 | |
| Manufacturer | NTE Electronics | |
| Continuous Drain Current | 40(A) | |
| Drain-Source On-Volt | 100(V) | |
| Operating Temperature Classification | Military | |
| Package Type | TO-3 | |
| Operating Temp Range | -55C to 150C | |
| Gate-Source Voltage (Max) | ±20(V) | |
| Channel Mode | Enhancement | |
| Number of Elements | 1 Element | |
| Rad Hardened | No | |
| Mounting | Through Hole | |
| Package | Bag | |
| Current - Continuous Drain (Id) @ 25℃ | 40A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Mfr | NTE Electronics, Inc | |
| Product Status | Active | |
| Power Dissipation (Max) | 150W (Tc) | |
| Package Description | FLANGE MOUNT, O-MBFM-P2 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | METAL | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Turn-on Time-Max (ton) | 135 ns | |
| Package Shape | ROUND | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Turn-off Time-Max (toff) | 225 ns | |
| Risk Rank | 1.6 | |
| Part Package Code | TO-204AA | |
| Drain Current-Max (ID) | 40 A | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | - | |
| ECCN Code | EAR99 | |
| Type | Power MOSFET |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Subcategory | FET General Purpose Power | |
| Max Power Dissipation | 150 W | |
| Technology | MOSFET (Metal Oxide) | |
| Terminal Position | BOTTOM | |
| Terminal Form | PIN/PEG | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 2 +Tab | |
| JESD-30 Code | O-MBFM-P2 | |
| Qualification Status | Not Qualified | |
| Polarity | N | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 150 W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 35 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 40 A | |
| Threshold Voltage | 4 V | |
| JEDEC-95 Code | TO-3 | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain Current-Max (Abs) (ID) | 32 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| Drain to Source Breakdown Voltage | 100 V | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| DS Breakdown Voltage-Min | 100 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 125 W | |
| FET Feature | - | |
| Drain to Source Resistance | 55 mΩ | |
| Nominal Vgs | 4 V | |
| Power Dissipation Ambient-Max | 150 W | |
| Width | 22.1996 mm | |
| Height | 8.89 mm | |
| Length | 152.4 mm | |
| REACH SVHC | Unknown |
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