Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
NTE2393 Технические параметры
NTE Electronics, Inc NTE2393 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Surface Mount | NO | |
| Supplier Device Package | TO-3P | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 10A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 125W (Tc) | |
| Manufacturer Part Number | NTE2393 | |
| Manufacturer | NTE Electronics | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 2.13 | |
| Drain Current-Max (ID) | 9 A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | - | |
| Operating Temperature | 150°C (TJ) | |
| ECCN Code | EAR99 | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 670mOhm @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Drain to Source Voltage (Vdss) | 500 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.7 Ω | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| DS Breakdown Voltage-Min | 500 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 150 W | |
| FET Feature | - |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ