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NTE2397 Технические параметры
NTE Electronics, Inc NTE2397 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Surface Mount | NO | |
| Supplier Device Package | TO-220 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 10A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 125W (Tc) | |
| Manufacturer Part Number | NTE2397 | |
| Manufacturer | NTE Electronics | |
| Continuous Drain Current | 10(A) | |
| Drain-Source On-Volt | 400(V) | |
| Operating Temperature Classification | Military | |
| Package Type | TO-220 | |
| Operating Temp Range | -55C to 150C | |
| Gate-Source Voltage (Max) | ±20(V) | |
| Channel Mode | Enhancement | |
| Number of Elements | 1 Element | |
| Rad Hardened | No | |
| Mounting | Through Hole | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Package Shape | RECTANGULAR | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 2.11 | |
| Drain Current-Max (ID) | 10 A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| ECCN Code | EAR99 | |
| Type | Power MOSFET | |
| Additional Feature | AVALANCHE RATED | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 +Tab | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Polarity | N | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 125(W) | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 6A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 400 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.55 Ω | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| DS Breakdown Voltage-Min | 400 V | |
| Avalanche Energy Rating (Eas) | 520 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 125 W | |
| FET Feature | - |
Индекс :
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