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- Transistors - Bipolar (BJT) - Single, Pre-Biased
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- NTE2414
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NTE2414 Технические параметры
NTE Electronics, Inc NTE2414 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Supplier Device Package | SOT-23 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 100 mA | |
| Manufacturer Part Number | NTE2414 | |
| Manufacturer | NTE Electronics | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 2.19 | |
| Series | - |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Additional Feature | BUILT IN BIAS RESISTOR RATIO 1 | |
| HTS Code | 8541.21.00.75 | |
| Subcategory | BIP General Purpose Small Signal | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| Power - Max | 200 mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN - Pre-Biased | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | |
| Frequency - Transition | 250 MHz | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 50 | |
| Resistor - Base (R1) | 10 kOhms | |
| Resistor - Emitter Base (R2) | 10 kOhms | |
| Collector-Emitter Voltage-Max | 50 V |
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