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NTE2557 Технические параметры
NTE Electronics, Inc NTE2557 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Surface Mount | NO | |
| Supplier Device Package | TO-247 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 15 A | |
| Manufacturer Part Number | NTE2557 | |
| Manufacturer | NTE Electronics | |
| Risk Rank | 2.19 | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Part Life Cycle Code | Active | |
| Number of Elements | 1 Element | |
| Package Shape | RECTANGULAR | |
| Transition Frequency-Nom (fT) | 20 MHz | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Style | FLANGE MOUNT | |
| Series | - |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | 150°C (TJ) | |
| ECCN Code | EAR99 | |
| Subcategory | Other Transistors | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| Case Connection | COLLECTOR | |
| Power - Max | 100 W | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN - Darlington | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1500 @ 10A, 3V | |
| Current - Collector Cutoff (Max) | 100μA | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 30mA, 10A | |
| Voltage - Collector Emitter Breakdown (Max) | 200 V | |
| Frequency - Transition | 20MHz | |
| Power Dissipation-Max (Abs) | 100 W | |
| Collector Current-Max (IC) | 15 A | |
| DC Current Gain-Min (hFE) | 1500 | |
| Collector-Emitter Voltage-Max | 200 V |
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