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NTE295 Технические параметры

NTE Electronics, Inc  NTE295 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126
Mfr NTE Electronics, Inc
Package Bag
Product Status Active
Current-Collector (Ic) (Max) 1A
Manufacturer Part Number NTE295
Свойство продукта Значение свойства
Manufacturer NTE Electronics
Series -
Operating Temperature 150°C (TJ)
Power - Max 750mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 500mA, 5V
Gain -
Voltage - Collector Emitter Breakdown (Max) 75V
Frequency - Transition 250MHz
Noise Figure (dB Typ @ f) -
Просмотр сходства
NTE295 brand manufacturers: NTE Electronics, Inc, Anli stock, NTE295 reference price.NTE Electronics, Inc. NTE295 parameters, NTE295 Datasheet PDF and pin diagram description download.You can use the NTE295 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NTE295 pin diagram and circuit diagram and usage method of function,NTE295 electronics tutorials.You can download from the Anli.