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NTE Electronics, Inc. NTE2986 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | ||
Surface Mount | NO | |
Number of Terminals | 3Terminals | |
Transistor Element Material | SILICON | |
Manufacturer Part Number | NTE2986 | |
Manufacturer | NTE Electronics | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Package Style | FLANGE MOUNT | |
Package Body Material | PLASTIC/EPOXY | |
Reflow Temperature-Max (s) | NOT SPECIFIED | |
Rohs Code | Yes | |
Package Shape | RECTANGULAR | |
Number of Elements | 1 Element | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NTE ELECTRONICS INC | |
Risk Rank | 5.75 | |
Drain Current-Max (ID) | 50 A |
Свойство продукта | Значение свойства | |
---|---|---|
ECCN Code | EAR99 | |
Additional Feature | FAST SWITCHING | |
Terminal Position | SINGLE | |
Terminal Form | THROUGH-HOLE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Reach Compliance Code | unknown | |
JESD-30 Code | R-PSFM-T3 | |
Qualification Status | Not Qualified | |
Configuration | SINGLE | |
Operating Mode | ENHANCEMENT MODE | |
Case Connection | DRAIN | |
Transistor Application | SWITCHING | |
Polarity/Channel Type | N-CHANNEL | |
Drain-source On Resistance-Max | 0.028 Ω | |
Pulsed Drain Current-Max (IDM) | 200 A | |
DS Breakdown Voltage-Min | 60 V | |
Avalanche Energy Rating (Eas) | 110 mJ | |
FET Technology | METAL-OXIDE SEMICONDUCTOR |