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NTE3031 Технические параметры
NTE Electronics, Inc NTE3031 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optical Sensors - Phototransistors | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | Radial - 3 Leads | |
| Surface Mount | NO | |
| Mounting Feature | THROUGH HOLE MOUNT | |
| Shape | ROUND | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Manufacturer Part Number | NTE3031 | |
| Manufacturer | NTE Electronics | |
| Operating Temperature-Min | -55 °C | |
| Operating Temperature-Max | 125 °C | |
| Power Dissipation (Max) | 0.2 W | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 5.62 | |
| Series | - |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | -55°C ~ 125°C | |
| ECCN Code | 3A001.A.2.C | |
| Subcategory | Photo Transistors | |
| Orientation | Top View | |
| Number of Functions | 1Function | |
| Reach Compliance Code | unknown | |
| Configuration | SINGLE | |
| Viewing Angle | - | |
| Power - Max | 150 mW | |
| Optoelectronic Device Type | PHOTO TRANSISTOR | |
| Size | 3.94 mm | |
| Voltage - Collector Emitter Breakdown (Max) | 30 V | |
| Wavelength | - | |
| Dark Current-Max | 100 nA | |
| Coll-Emtr Bkdn Voltage-Min | 30 V | |
| Response Time-Max | 0.000002 s | |
| Current - Dark (Id) (Max) | 100 nA | |
| Light Current-Nom | 1 mA |
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