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NTE3122 Технические параметры
NTE Electronics, Inc NTE3122 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optical Sensors - Phototransistors | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | Radial - 2 Leads | |
| Surface Mount | NO | |
| Mounting Feature | THROUGH HOLE MOUNT | |
| Shape | ROUND | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 4 mA | |
| Manufacturer Part Number | NTE3122 | |
| Manufacturer | NTE Electronics | |
| Operating Temperature-Min | -25 °C | |
| Operating Temperature-Max | 85 °C | |
| Power Dissipation (Max) | 0.075 W | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 5.16 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | - | |
| Operating Temperature | -25°C ~ 85°C (TA) | |
| Subcategory | Photo Transistors | |
| Orientation | Side View | |
| Number of Functions | 1Function | |
| Reach Compliance Code | unknown | |
| Configuration | SINGLE | |
| Viewing Angle | - | |
| Power - Max | 75 mW | |
| Optoelectronic Device Type | PHOTO DARLINGTON | |
| Voltage - Collector Emitter Breakdown (Max) | 35 V | |
| Wavelength | 860nm | |
| Peak Wavelength | 860 nm | |
| Dark Current-Max | 1000 nA | |
| Coll-Emtr Bkdn Voltage-Min | 35 V | |
| Infrared Range | YES | |
| Response Time-Max | 0.00008 s | |
| Current - Dark (Id) (Max) | 10 μA |
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