Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
NTE313 Технические параметры
NTE Electronics, Inc NTE313 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 3-SMD, Flat Lead | |
| Mount | Surface Mount | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Supplier Device Package | 3-SMD | |
| Weight | 7.257478 g | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 20mA | |
| Manufacturer Part Number | NTE313 | |
| Manufacturer | NTE Electronics | |
| RoHS | Compliant | |
| Package Description | DISK BUTTON, O-CRDB-F3 | |
| Package Style | DISK BUTTON | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Transition Frequency-Nom (fT) | 530 MHz | |
| Package Shape | ROUND | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 5.76 | |
| Series | - | |
| Operating Temperature | 150°C (TJ) | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -60 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | LOW NOISE | |
| HTS Code | 8541.21.00.75 | |
| Subcategory | Other Transistors | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-CRDB-F3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Power - Max | 150mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 30 V | |
| Max Collector Current | 20 mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 2mA, 10V | |
| Gain | 23dB | |
| Voltage - Collector Emitter Breakdown (Max) | 30V | |
| Frequency - Transition | 530MHz | |
| Collector Base Voltage (VCBO) | 30 V | |
| Power Dissipation-Max (Abs) | 0.15 W | |
| Emitter Base Voltage (VEBO) | 4 V | |
| Collector Current-Max (IC) | 0.02 A | |
| DC Current Gain-Min (hFE) | 25 | |
| Collector-Emitter Voltage-Max | 30 V | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| Collector-Base Capacitance-Max | 1 pF | |
| Noise Figure (dB Typ @ f) | 2.5dB @ 200MHz | |
| Width | 76.2 mm | |
| Height | 12.7 mm | |
| Length | 152.4 mm |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ