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NTE3310 Технические параметры
NTE Electronics, Inc NTE3310 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Surface Mount | NO | |
| Supplier Device Package | TO-3P | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 415 A | |
| Test Conditions | - | |
| Manufacturer Part Number | NTE3310 | |
| Manufacturer | NTE Electronics | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Turn-on Time-Nom (ton) | 700 ns | |
| Turn-off Time-Nom (toff) | 650 ns | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Rise Time-Max (tr) | 600 ns |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Risk Rank | 5.7 | |
| Series | - | |
| Operating Temperature | 150°C (TJ) | |
| ECCN Code | EAR99 | |
| Subcategory | Insulated Gate BIP Transistors | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Power - Max | 100 W | |
| Transistor Application | MOTOR CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Power Dissipation-Max (Abs) | 100 W | |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 15A | |
| Collector Current-Max (IC) | 15 A | |
| IGBT Type | - | |
| Collector-Emitter Voltage-Max | 600 V | |
| Current - Collector Pulsed (Icm) | 30 A | |
| Td (on/off) @ 25°C | 400ns/500ns | |
| Switching Energy | - | |
| Gate-Emitter Voltage-Max | 20 V | |
| Fall Time-Max (tf) | 350 ns |
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